| PART |
Description |
Maker |
| FST71100SM FST7135SM FST7160SM FST7180SM FST7120SM |
70A, 20V ultra fast recovery rectifier
70 Amp Rectifier 20 to 100 Volts Schottky Barrier
MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| UF2805B |
RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF284OP |
RF MOSFET Power Transistor, 4OW, 28V 100 - 500 MHz
|
Tyco Electronics
|
| UF28100V |
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| JANTX2N6796 JANTX2N6800 JANTX2N6802 JANTXV2N6796 J |
100 V, 200 V, 400 V & 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR
|
List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
|
| BUK581-100A |
PowerMOS transistor Logic level FET 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NP100P06PDG-E2-AY NP100P06PDG NP100P06PDG-E1-AY |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZP, TO-263, 3 PIN
MOS FIELD EFFECT TRANSISTOR
|
Cornell Dubilier Electronics, Inc.
Fujitsu, Ltd.
NEC[NEC]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| FSPJ160F3 FSPJ160D1 FSPJ160F4 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 70A条（丁）|54AA
70 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
PanJit International, Inc.
FAIRCHILD SEMICONDUCTOR CORP
|
| BUK472-100A BUK472-100B |
PowerMOS transistor Isolated version of BUK452-100A/B 6.1 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
Philips Semiconductors
NXP Semiconductors N.V.
|
|
